Carbon Nanotube Field Effect Transistor: A Promising Alternative to Nanoscale Mosfet

Abstract

Carbon Nanotubes (CNT) were discovered by Ijjima (1991). Since then, they have caused considerable excitement among researchers due to their potential technological applications. It is believed that Carbon Nanotube Field Effect Transistor (CNTFET) will be one of the most promising electronic devices to replace silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) in the near future. If that be so, then we need to know the electrical properties of CNT. In this paper we have reviewed and given an insight into the electronic structure of carbon nanotubes and also discussed how chirality plays a vital role in determining such properties. Electronic Density of States (DOS) and phonon dispersion of CNT which are central to understanding the electronic properties, are also discussed for different CNTs. We have also discussed about CNTFET, its classification and finally a comparison between CNTFET and MOSFET is given.

Keywords: Carbon Nanotube (CNT), Chirality, Energy dispersion, Density of states, Phonon dispersion, Carbon Nanotube Field Effect Transistor (CNTFET).