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Hole-Transporting Organic Salt Induced Surface-2D/Bulk-3D Hierarchy Perovskite for Efficient and Stable Photovoltaic Devices

42 Pages Posted: 20 Feb 2020 Publication Status: Review Complete

See all articles by Sizhou Liu

Sizhou Liu

Nanjing Tech University - Institute of Advanced Materials (IAM)

Fangfang Wang

Nanjing Tech University - Institute of Advanced Materials (IAM)

Yikai Yun

Nanjing Tech University - Institute of Advanced Materials (IAM)

You Liu

Nanjing Tech University - Institute of Advanced Materials (IAM)

Jungan Wang

Nanjing Tech University - Institute of Advanced Materials (IAM)

Taotao Ma

Nanjing Tech University - Institute of Advanced Materials (IAM)

Shanglei Feng

Chinese Academy of Sciences (CAS), Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility

Lifeng Yang

Chinese Academy of Sciences (CAS), Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility

Yingguo Yang

Chinese Academy of Sciences (CAS), Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility

Wei Huang

Northwestern Polytechnical University - Frontiers Science Center for Flexible Electronics; Northwestern Polytechnical University, China - Key Shaanxi Institute of Flexible Electronics (SIFE)

Tianshi Qin

Nanjing Tech University - Institute of Advanced Materials (IAM)

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Abstract

Here, we report a novel hole-transporting organic salt (HTOS) based on (4'-(bis(4-methoxyphenyl)amino)-[1,1'-biphenyl]-4-yl)methanaminium bromide, which facilely forms a hole-transporting 2D perovskite on the top surface of 3D perovskite via a spin-coating procedure. This capping 2D perovskite can significantly reduce interface trap densities and enhance hole-extracting abilities of heterojunction region between 3D perovskite and hole-transporting layer (HTL), owing to its spatially and potentially confined hole-charge carriers, simultaneously. This interfacial HTOS induced 2D perovskite can effectively suppress nonradiative recombination, which leads to an increase in the photovoltage of perovskite solar cells (PSC) to more than 1.20 V. As a result, the n-i-p planar PSC can achieve a champion power conversion efficiency of 20.71% as well as excellent operational stability exhibiting 92% of initial efficiency after 500 h continuous illumination without encapsulation. This work provides a facile approach to fabricate hole-transporting surface-2D and light-harvesting bulk-3D hierarchy perovskite structure, which delivers significantly enhanced efficiency and stability of PSCs.

Keywords: Hole-transporting organic salt, surface-2D/bulk-3D hierarchy perovskite, 2D-perovskite, perovskite solar cell, surface passivation, enhanced charge exaction, high stability

Suggested Citation

Liu, Sizhou and Wang, Fangfang and Yun, Yikai and Liu, You and Wang, Jungan and Ma, Taotao and Feng, Shanglei and Yang, Lifeng and Yang, Yingguo and Huang, Wei and Qin, Tianshi, Hole-Transporting Organic Salt Induced Surface-2D/Bulk-3D Hierarchy Perovskite for Efficient and Stable Photovoltaic Devices. Available at SSRN: https://ssrn.com/abstract=3537943 or http://dx.doi.org/10.2139/ssrn.3537943
This version of the paper has not been formally peer reviewed.

Sizhou Liu

Nanjing Tech University - Institute of Advanced Materials (IAM) ( email )

China

Fangfang Wang

Nanjing Tech University - Institute of Advanced Materials (IAM)

China

Yikai Yun

Nanjing Tech University - Institute of Advanced Materials (IAM) ( email )

China

You Liu

Nanjing Tech University - Institute of Advanced Materials (IAM) ( email )

China

Jungan Wang

Nanjing Tech University - Institute of Advanced Materials (IAM) ( email )

China

Taotao Ma

Nanjing Tech University - Institute of Advanced Materials (IAM) ( email )

China

Shanglei Feng

Chinese Academy of Sciences (CAS), Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility ( email )

Shanghai, 201204
China

Lifeng Yang

Chinese Academy of Sciences (CAS), Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility

Shanghai, 201204
China

Yingguo Yang

Chinese Academy of Sciences (CAS), Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility ( email )

Shanghai, 201204
China

Wei Huang

Northwestern Polytechnical University - Frontiers Science Center for Flexible Electronics

Xi'an
China

Northwestern Polytechnical University, China - Key Shaanxi Institute of Flexible Electronics (SIFE) ( email )

China

Tianshi Qin (Contact Author)

Nanjing Tech University - Institute of Advanced Materials (IAM)

China

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