Hydrogen Sensor with Ppb-Level Detection Limit Prepared by Pd-Modified and Bi-Doped Oxidized Ni Foam

23 Pages Posted: 22 Mar 2022

See all articles by Jiawei Tian

Jiawei Tian

affiliation not provided to SSRN

Hongchuan Jiang

University of Electronic Science and Technology of China (UESTC) - State Key Laboratory of Electronic Thin Films and Integrated Devices

Xiaohui Zhao

University of Electronic Science and Technology of China (UESTC)

Gangwei Shi

affiliation not provided to SSRN

Yunyu Dai

affiliation not provided to SSRN

Xinwu Deng

University of Electronic Science and Technology of China (UESTC)

Xie Hang

affiliation not provided to SSRN

Wanli Zhang

University of Electronic Science and Technology of China (UESTC)

Abstract

In this work, we propose a hydrogen sensor to realize ppb-level hydrogen detection at a lower temperature. To fabricate the sensor, foamed nickel was thermally oxidized in bismuth oxide vapor to form the Bi-doped oxidized nickel foam, and Pd nanoparticles were further deposited on its surface by magnetron sputtering. This sensor possesses a unique phenomenon, that is, the response of the sensor does not decline due to repeated hydrogen charging and discharging as same as most hydrogen sensors, but keeps increasing and reaches balance eventually. The Bi3+  doping leads to a reduction in the thickness of the NiO hole accumulation layer, which contributes to the high response. The Bi5+ self-doping occurring during the repeated cycle test further promotes oxygen adsorption, so that the sensor response is continuously improved. As a result, the response of the Pd-Bi-OFN sensor to 1% hydrogen is as high as 580% in the air, and the detection limit is as low as 20 ppb at a lower temperature of 75 ˚C. Meanwhile, the sensor possesses high selectivity, great humidity stability, and long durability. This work provides an outstanding guidance to fabricate reliable ppb-level hydrogen sensors.

Keywords: hydrogen sensing, detection limit, Bi ion doping, low temperature

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Suggested Citation

Tian, Jiawei and Jiang, Hongchuan and Zhao, Xiaohui and Shi, Gangwei and Dai, Yunyu and Deng, Xinwu and Hang, Xie and Zhang, Wanli, Hydrogen Sensor with Ppb-Level Detection Limit Prepared by Pd-Modified and Bi-Doped Oxidized Ni Foam. Available at SSRN: https://ssrn.com/abstract=4031295 or http://dx.doi.org/10.2139/ssrn.4031295

Jiawei Tian

affiliation not provided to SSRN ( email )

No Address Available

Hongchuan Jiang (Contact Author)

University of Electronic Science and Technology of China (UESTC) - State Key Laboratory of Electronic Thin Films and Integrated Devices ( email )

Chengdu
China

Xiaohui Zhao

University of Electronic Science and Technology of China (UESTC) ( email )

Gangwei Shi

affiliation not provided to SSRN ( email )

No Address Available

Yunyu Dai

affiliation not provided to SSRN ( email )

No Address Available

Xinwu Deng

University of Electronic Science and Technology of China (UESTC) ( email )

Xie Hang

affiliation not provided to SSRN ( email )

No Address Available

Wanli Zhang

University of Electronic Science and Technology of China (UESTC) ( email )

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